 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 40 Volt VCEO * Fast switching COMPLEMENTARY TYPE PARTMARKING DETAIL FZT2907A FZT2222A FZT2222A C E C B SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 75 40 5 600 2 -55 to+150 UNIT V V V 10 10 10 10 0.3 1.0 nA nA nA V V V V CONDITIONS. IC=10A, IE=0 IC=10mA, IB=0 * IE=10A, IC=0 VCB=50V, IE=0 VCB=50V, IE=0, Tamb=150C VEB=3V, IC=0 VCE=60V, VEB(off)=3V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V * IC=10mA, VCE=10V* IC=10mA, VCE=10V,Tamb=-55C* IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* UNIT V V V mA W C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICEX VCE(sat) VBE(sat) hFE 0.6 35 50 75 35 100 50 40 75 40 6 VALUE MIN. MAX. ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). A 1.2 2.0 300 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 296 FZT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Transition Frequency Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time SYMBOL fT Cobo Cibo td tr ts tf VALUE MIN. 300 8 25 10 25 225 60 MAX. MHz pF pF ns ns ns ns IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=140KHz VEB=0.5V, IC=0 f=140KHz VCE=30V, VBE(off) =0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCE=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) UNIT CONDITIONS. DELAY AND RISE TEST CIRCUIT +30V Generator rise time <2ns Pulse width (t 1)<200ns Duty cycle = 2% 9.9V 200 619 0.5V 0 STORAGE TIME AND FALL TIME TEST CIRCUIT +30V Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns 200 =100s <5ns +16.2 V 0 1K -13.8 V =500 s 1N916 -3V Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns Duty cycle = 2% 3 - 297 |
Price & Availability of FZT2222A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |